IMS Neuromorphic Engineering

Photos	Name	Process	Date	Size	Description
	GALWAY	AMS BiCMOS 0.35 µm SiGe	06/2006	3400 x 3120	5 Neurons + 1 Condutance or 21 Conductances
	CLAUDIA	AMS BiCMOS 0.8 µm	05/2004	4400 x 4400	3 Neurons with 4 Condutances and 1 Neuron with 3 Conductances
	PAMINA	AMS BiCMOS 0.35 µm SiGe	11/2003	4170 x 3520	10 Conductances and 16 synapses with parameters memorized in analogic memory
	VIOLETTA	AMS BiCMOS 0.8 µm	08/2002	2700 x 3200	5 Conductances
	TRIESTE	AMS BiCMOS 0.8 µm	05/2002	3400 x 3400	1 configurable neuron in 3 or 4 conductances
	MAURICE	AMS BiCMOS 0.8 µm	03/2002	3186 x 2885	Array of dynamic memory cells + 12 conductances
	CALVIN	AMS BiCMOS 0.8µm	03/2000	3186 x 2885	Array of dynamic memory cells + 12 conductances
	FPCA-R	AMS BiCMOS 0.8 µm	01/2000	2710 x 2710	4 conductances + Calcium dependance + Calcium regulation + Synapse
	DELPHINE	AMS CMOS 0.6 µm	09/1999	1750 x 1750	Use of MOS devices in subthreshold to replace bipolar devices
	BABAR	AMS BiCMOS 0.8 µm	04/1999	2170 x 2410	Various analog memory cells (EEPROM matrix)+ 2 conductances
	ANNIE	AMS BiCMOS 0.8 µm	11/1998	2925 x 2190	Dynamic memory cells+ 2 conductances
	SUSIE	AMS BiCMOS 0.8 µm	11/1998	3380 x 2635	4 conductances + Calcium dependance + Calcium regulation
	HERRY	AMS BiCMOS 0.8 µm	10/1997	2985 x 1910	Analog memory cells (EEPROM) + conductances
	ERNEST_JR	AMS BiCMOS 0.8 µm	07/1997	2545 x 1785	2 conductances
	ERNEST	AMS BiCMOS 0.8 µm	07/1997	2950 x 2090	2 conductances + calculates calcium concentration & regulation
	DOOZIE	AMS BiCMOS 1.2 µm	09/1996	13.27 mm²	Analog memory cells (EEPROM) + conductances
	CASIMIR	AMS BiCMOS 1.2 µm	08/1996	2860 x 2000	4 voltage-controlled current sources
	GROVER	AMS BiCMOS 1.2 µm	08/1996	4.27 mm²	2 conductances
	ELMO	AMS BiCMOS 1.2 µm	08/1996	1.28 mm²	Calculates a Calcium concentration